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TYPICAL PERFORMANCE CURVES (R)
APT15GN120K APT15GN120KG*
APT15GN120K(G) 1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
TO-220
* 1200V Field Stop * Trench Gate: Low VCE(on) * Easy Paralleling
G
C
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT15GN120K(G) UNIT Volts
1200 30 45 22 45 45A @ 1200V 195 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) Gate Threshold Voltage (VCE = VGE, I C = 600A, Tj = 25C) MIN TYP MAX Units
1200 5.0 1.4
2 2
5.8 1.7 2.0
6.5 2.1 100 TBD 120
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
Volts
I CES I GES RGINT
Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7599
Rev B
N/A
10-2005
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C)
A
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT15GN120K(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 15A TJ = 150C, R G = 4.3 7, VGE = 15V, L = 100H,VCE = 1200V Inductive Switching (25C) VCC = 800V VGE = 15V I C = 15A VGE = 15V MIN TYP MAX UNIT pF V nC
1200 65 50 9.0 90 5 55 45 10 9 150 110 410 730 950 10 9 170 185 475 1310 1300 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
RG = 4.3 7 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 800V VGE = 15V I C = 15A
Turn-on Switching Energy (Diode)
66
TJ = +125C
RG = 4.3 7
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.64 1.18 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
10-2005 Rev B
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7599
TYPICAL PERFORMANCE CURVES
60 50 40
TJ = 125C
V
GE
= 15V
60
15V
APT15GN120K(G)
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
50 13V 40 30 20 10 0 12V 11V
10V 9V 8V 7V
30
TJ = 25C
20
TJ = -55C
10 0
80 70 60 50 40 30 20 10
FIGURE 1, Output Characteristics(TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 15A C T = 25C
J
0 2 4 6 8 10 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
VCE = 240V
VCE = 600V
TJ = -55C TJ = 25C TJ = 125C
8 6 4 2 0 0 20
VCE =960V
0
0
4 8 12 16 20 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
40 60 80 GATE CHARGE (nC)
100
FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.0 2.5 2.0 1.5 1.0 0.5 0 IC = 7.5A
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3.0 2.5 2.0 1.5 1.0 0.5 IC = 15A
IC = 30A
IC = 30A IC = 15A
IC = 7.5A
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 60
-50
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
50 40 30 20 10 0 -50
10-2005 050-7599 Rev B
1.05
1.00
0.95
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90 -50
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
12 10 8 6 4 2 T = 25C, T =125C J J 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 16 14 12
tf, FALL TIME (ns) tr, RISE TIME (ns)
RG = 4.3, L = 100H, VCE = 800V VCE = 800V RG = 4.3 L = 100 H
200
APT15GN120K(G)
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
180 160 140 120 100 80 60 40 20 0
VCE = 800V RG = 4.3 L = 100 H VGE =15V,TJ=125C VGE =15V,TJ=25C
VGE = 15V
0
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
300 250 200 150 100 50 0
TJ = 25C, VGE = 15V
RG = 4.3, L = 100H, VCE = 800V
10 8 6 4 2 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 3000 0
TJ = 25 or 125C,VGE = 15V
TJ = 125C, VGE = 15V
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
3500
EOFF, TURN OFF ENERGY LOSS (J)
EON2, TURN ON ENERGY LOSS (J)
2500 2000 1500 1000 500
V = 800V CE V = +15V GE R = 4.3
G
3000 2500 2000 1500 1000 500 0
= 800V V CE = +15V V GE R = 4.3
G
TJ = 125C
TJ = 125C
TJ = 25C
TJ = 25C
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 5000
SWITCHING ENERGY LOSSES (J)
= 800V V CE = +15V V GE T = 125C
J
0
5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
3500
= 800V V CE = +15V V GE R = 4.3
G
4000 3500 3000 2500 2000 1500 1000 500 0 0
Eoff,15A
Eon2,30A Eoff,30A
SWITCHING ENERGY LOSSES (J)
4500
3000 2500 2000 1500 1000 500 0
Eoff,30A
Eon2,15A
Eon2,30A
10-2005
Eoff,15A Eon2,15A
Eon2,7.5A Eoff,7.5A
Rev B
Eon2,7.5A
Eoff,7.5A
050-7599
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
2,000 1,000 C, CAPACITANCE ( F) 500 IC, COLLECTOR CURRENT (A) Cies
50 45 40 35 30 25 20 15 10 5
APT15GN120K(G)
P
100 50 Coes Cres
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.70 0.60 0.50 0.40 0.5 0.30 0.20 0.10 0 0.3 SINGLE PULSE 0.1 0.05 10-5 10-4
Note:
ZJC, THERMAL IMPEDANCE (C/W)
D = 0.9
0.7
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
140 FMAX, OPERATING FREQUENCY (kHz) 100
Junction temp. (C)
RC MODEL
0.323
0.00192
50
F
Power (watts)
0.258
0.0312
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
T = 125C J T = 75C C D = 50 % V = 800V CE R = 4.3
G
fmax2 = Pdiss =
0.0600 Case temperature. (C)
0.389
10 6
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
5 10 15 20 25 30 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
0
050-7599
Rev B
10-2005
APT15GN120K(G)
APT15DQ120
10% td(on)
Gate Voltage TJ = 125C
V CC
IC
V CE
tr
90% Collector Current 5% Collector Voltage
5%
10%
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) 90% Collector Voltage 10%
TJ = 125C
tf
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
TO-220 (K) Package Outline
e3 100% Sn
10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 6.85 (.270) 5.85 (.230)
1.39 (.055) 0.51 (.020)
Drain
12.192 (.480) 9.912 (.390)
3.42 (.135) 2.54 (.100)
4.08 (.161) Dia. 3.54 (.139)
3.683 (.145) MAX.
0.50 (.020) 0.41 (.016)
14.73 (.580) 12.70 (.500)
Gate Collector Emitter
1.77 (.070) 3-Plcs. 1.15 (.045)
10-2005
2.92 (.115) 2.04 (.080) 4.82 (.190) 3.56 (.140)
1.01 (.040) 3-Plcs. 0.83 (.033) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190)
Rev B
050-7599
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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